Browsing by Subject "Semiconducting gallium"
Now showing items 1-8 of 8
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Delta(δ)-doping of semiconductor nanowires
(2013)The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
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Article
Electric control of the spin Hall effect by intervalley transitions
(2014)Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin ...
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Article
Electrical determination of the spin relaxation time of photoexcited electrons in GaAs
(2010)Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin ...
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Article
Electronic properties of core-shell nanowire resonant tunneling diodes
(2014)The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...
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Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
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Article
Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
(2009)We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. ...